Journal Of Semiconductors中国学者近期发表的论文-高引用文章

MoS2 quantum dots/AlGaN nanowire heterostructure-based photodetectors for solar-blind photodetection and optical communicatio

Author: Wang, Menglong; Chen, Wei; Liu, Xin; Gu, Wengang; Li, Yang; Yang, Xudong; Sun, Haiding

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 3, pp. -. DOI: 10.1088/1674-4926/25090026

Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2 passivatio

Author: Huang, Tingrui; Cao, Jie; Yu, Zuoxu; Zhang, Yuzhen; Xu, Wenting; Li, Xifeng; Peng, Cong; Sun, Weifeng; Yang, Guangan; Wu, Wangran

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25050023

Characteristics of gallium oxide nMOSFET inverte

Author: Zhang, Yixin; Chen, Haifeng; Ding, Zijie; Zhang, Yuduo; Lu, Qin; Liu, Xiangtai; Guan, Yunhe

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25040011

Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contact

Author: Zhu, Jianggen; Feng, Jiaren; Huang, Shuting; Yang, Ning; Qiu, Binju; Duan, Enchuan; Liu, Sheng; Zhang, Bo; Zhang, Zhaofu; Zhou, Qi

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25050020

Compressive stress management for hillock-free AlGaN epitaxy on HTA-AlN templates using low-Al-content interlaye

Author: Zhang, Entao; Ben, Jianwei; Nie, Zikai; Zhang, Shanli; Chen, Yang; Jiang, Ke; Sun, Xiaojuan; Li, Dabing

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25080020

Non-D18-based organic solar cells: strategies and insights toward the efficiency ≥ 20

Author: Yang, Fang; Feng, Erming; Zhang, Chujun; Chang, Jianhui; Li, Hengyue; Liu, Fangyang; Zou, Yingping; Yang, Junliang

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25080035

In situ synthesis and stabilization of perovskite quantum dots in electrospinned fiber

Author: Serdobintsev, Alexey; Neplokh, Vladimir; Koryakin, Alexander; Kozhevnikov, Ilia; Yakubova, Anastasiya; Kirilenko, Demid; Saveleva, Mariia; Makarov, Sergey; Mukhin, Ivan; Demina, Polina

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25060014

Identification of H2 and NH3 gases using calorimetric signals and transient response through machine learnin

Author: Luo, Wenxin; Zheng, Yingcong; Liu, Yijun; Li, Mingjie

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25040018

High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide gratin

Author: Liu, Zhipeng; Hu, Yiling; Liu, Zhi; Zhang, Jiashun; Zheng, Jun; Yin, Xiaojie; Zuo, Yuhua; An, Junming; Cheng, Buwen

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25050018

Harnessing Eu/Ce-codoped ZnO nanomaterial derived from MOF precursor for high-performance n-butanol sensing under UV activation at ambient temperatur

Author: Liu, Yinzhong; Yang, Xuechun; Guo, Yun; Wang, Lingchao; Li, Xiaofan; Guo, Hui; Qiao, Yiyu; Zhu, Xiaotao; Cheng, Lingli; Jiao, Zheng

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25070023